Semiconductor device manufacturing: process – With measuring or testing
Reexamination Certificate
2005-08-30
2005-08-30
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
With measuring or testing
C438S455000
Reexamination Certificate
active
06936482
ABSTRACT:
Techniques are shown in which substrates having a first layer of a first material and second layer of a second material, wherein the second material is less noble than the first material, is provided by bonding the first and second layers together with an amorphous layer interposed there between. The amorphous material may be deposited on a bonding face of the first layer, second layer, or both, before the operation of bonding the first and second layers. The layer with less noble material may be a supporting layer and the other layer may be an active layer for forming components in optics, electronics, or opto-electronics. The amorphous layer may be polished before the bonding operation.
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S.O.I.TEC Silicon on Insulator Technologies S.A.
Winston & Strawn LLP
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