Semiconductor device manufacturing: process – Having organic semiconductive component
Reexamination Certificate
2004-02-27
2008-11-04
Garber, Charles D. (Department: 2812)
Semiconductor device manufacturing: process
Having organic semiconductive component
C438S151000, C257S040000, C257SE51006
Reexamination Certificate
active
07445954
ABSTRACT:
A method for the manufacture of a thin-film field-effect device comprising, on a mechanical support layer, source and drain electrodes (S, D), a layer of semiconductor material (SC) for the formation of a conduction channel, and a gate electrode (G) insulated from the channel region, is described. The method provides for the use of a mechanical support layer in the form of a film (INS) of flexible, electrically insulating material; for the formation of the source and drain electrodes (S, D) in accordance with a predetermined configuration on a first surface of the insulating film; and for the formation of the gate electrode (G) on the opposite surface of the insulating film (INS) in accordance with a predetermined configuration complementary with the configuration of the source and drain electrodes (S, D), that configuration being achieved by a lithographic technique by selective masking determined by the source and drain electrodes (S, D) which are formed on the first surface of the film (INS).
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Bonfiglio Annalisa
Lampis, legal representative Giulia
Mameli Fulvia
Sanna, legal representative Giulia
Sanna, legal representative Marco Federico
Consiglio Nazionale Delle Ricerche-INFM Istituto Nazion
Garber Charles D.
Patel Reema
Sughrue & Mion, PLLC
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