Method of fabricating substrate

Details Method of fabricating substrate Method of fabricating substrate

2011-01-11

2011-01-11

Louie, Wai-Sing (Department: 2814)

Semiconductor device manufacturing: process

Chemical etching

C438S690000, C438S704000, C438S706000, C438S717000, C438S745000, C257SE21214

Reexamination Certificate

active

07867908

ABSTRACT:
A method of fabricating a substrate includes following steps. First, a metallic panel having a first surface and a second surface is provided. A first half-etching process is carried out to etch the first surface of the metallic panel to a first depth so that a first patterned metallic layer is formed on the first surface. Next, a first insulating material is deposited into gaps in the first patterned metallic layer to form a first insulator. Thereafter, a second half-etching process is carried out to etch the second surface of the metallic panel to a second depth and expose at least a portion of the first insulator so that a second patterned metallic layer is formed on the second surface. The first depth and the second depth together equal the thickness of the metallic panel.

REFERENCES:
patent: 4871418 (1989-10-01), Wittlinger et al.
patent: 5712448 (1998-01-01), Vandersande et al.
patent: 6121539 (2000-09-01), Johnson et al.
patent: 6599768 (2003-07-01), Chen

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