Method of fabricating sub-micron hemispherical and...

Etching a substrate: processes – Forming or treating optical article

Reexamination Certificate

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C216S026000, C204S192170, C430S321000

Reexamination Certificate

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06969472

ABSTRACT:
A method for manufacturing hemi-cylindrical and hemi-spherical micro structures is provided. A pattern is formed onto a substrate, and a layer of material is subsequently grown onto the substrate. Due to growth characteristics, the layer will form radially symmetric features when grown to an appropriate thickness.

REFERENCES:
patent: 5230990 (1993-07-01), Iwasaki et al.
patent: 5324623 (1994-06-01), Tsumori
patent: 5694246 (1997-12-01), Aoyama et al.
patent: 5910940 (1999-06-01), Guerra
patent: 6090907 (2000-07-01), Saito et al.
patent: 6115348 (2000-09-01), Guerra
patent: 6147732 (2000-11-01), Aoyama et al.

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