Method of fabricating storage capacitors using high dielectric c

Details Method of fabricating storage capacitors using high dielectric c Method of fabricating storage capacitors using high dielectric c

1994-06-09

1995-05-16

Thomas, Tom

Fishing, trapping, and vermin destroying

437919, 437 52, 148DIG14, 257295, 3613211, 365145, H01L 2170

Patent

active

054160421

ABSTRACT:
A storage capacitor having high dielectric constant materials and a method for forming same are described. The method solves the problems associated with fabrication of planar capacitors for DRAM chips constructed from inorganic oxides with perovskite structure. These materials are not readily etched by conventional ion etching techniques. These materials also react with silicon and silicon dioxide and the disclosed process avoids these interactions.

REFERENCES:
patent: 4577213 (1986-03-01), Bauhahn
patent: 5046043 (1991-09-01), Miller et al.
patent: 5060191 (1991-10-01), Nagasaki et al.
patent: 5070026 (1991-12-01), Greenwald et al.
patent: 5079199 (1992-01-01), Ochi et al.
patent: 5081706 (1992-01-01), Kim
patent: 5104690 (1992-04-01), Greenwald
patent: 5119154 (1992-06-01), Gnadinger
patent: 5155658 (1992-10-01), Inam et al.
patent: 5164808 (1992-11-01), Evans et al.
patent: 5191510 (1993-03-01), Huffman
patent: 5192704 (1993-03-01), McDavid et al.
patent: 5313089 (1994-05-01), Jones
patent: 5330931 (1994-07-01), Emesh et al.
patent: 5337207 (1994-08-01), Jones et al.
patent: 5350705 (1994-09-01), Brassington et al.
patent: 5352622 (1994-10-01), Chung
IBM Technical Disclosure Bulletin vol. 37, #6A, Jun. 1994, p. 93.

Affiliated with

Also associated with

Rating

Method of fabricating storage capacitors using high dielectric c does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating storage capacitors using high dielectric c, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating storage capacitors using high dielectric c will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-637507