Method of fabricating STI

Details Method of fabricating STI Method of fabricating STI

1999-10-18

2000-11-21

Chaudhuri, Olik

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438435, H01L 2176

Patent

active

061502375

ABSTRACT:
A fabrication method for shallow trench isolation (STI) is briefly described as follows. A substrate is provided with a patterned mask layer and pad oxide layer formed thereon, so that a first opening, which exposes a part of the substrate, is formed. A shallow trench is then formed in the substrate, followed by filling the shallow trench with a first insulating layer, wherein the surface of the first insulating layer is lower than the surface of the substrate, and a part of the substrate forming the sidewall of the shallow trench is exposed. A part of the mask layer and pad oxide layer is removed to enlarge the first opening, so that a second opening, which exposes a part of the substrate, is formed. A doped region is formed on the exposed part of the substrate, while the second opening and the shallow trench are filled with a second insulating layer. Finally, the mask layer and the pad oxide layer are removed in sequence to complete the manufacture of the STI.

REFERENCES:
patent: 5616513 (1997-04-01), Shepard
patent: 5643822 (1997-07-01), Furukawa et al.
patent: 5963819 (1999-10-01), Lan

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