Method of fabricating stacked assembly including plurality...

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Assembly of plural semiconductive substrates each possessing...

Reexamination Certificate

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C438S113000, C438S460000, C257SE21506

Reexamination Certificate

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08043895

ABSTRACT:
A method is provided for fabricating a stacked microelectronic assembly by steps including stacking and joining first and second like microelectronic substrates, each including a plurality of like microelectronic elements attached together at dicing lanes. Each microelectronic element has boundaries defined by edges including a first edge and a second edge. The first and second microelectronic substrates can be joined in different orientations, such that first edges of microelectronic elements of the first microelectronic substrate are aligned with second edges of microelectronic elements of the second microelectronic substrate. After exposing traces at the first and second edges of the microelectronic elements of the stacked microelectronic substrates, first and second leads can be formed which are connected to the exposed traces of the first and second microelectronic substrates, respectively. The second leads can be electrically isolated from the first leads.

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