Method of fabricating specimen for exposing defects of a semicon

Details Method of fabricating specimen for exposing defects of a semicon Method of fabricating specimen for exposing defects of a semicon

1996-07-19

1998-12-15

Codd, Bernard P.

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

216 83, 216 84, B44C 122, C03C 1500

Patent

active

058496424

ABSTRACT:
A method of fabricating a specimen for the observation and analysis of defects in a wafer includes the steps of: locating a position of a defect which exists in a patterned layer of a wafer on which a semiconductor device is formed; forming a photoresist layer on an outer side of the patterned layer at the position; drilling the wafer to form a hole from an underlying, outer portion of the wafer to the outer side, i.e., a top portion of the patterned layer where the diameter of the hole formed gradually decreases from the underlying portion to the top portion; and etching the drilled portion to remove the remaining residue.

REFERENCES:
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patent: 4094752 (1978-06-01), Vahe
patent: 5131752 (1992-07-01), Yu et al.
patent: 5191213 (1993-03-01), Ahmed et al.
patent: 5214283 (1993-05-01), Le
patent: 5498871 (1996-03-01), Koo et al.
IBM Technical Disclosure Bulletin, vol. 21, No. 2, "Measuring Boron Duping Profiles in Silicon", Briska,. p. 671, Jul. 1978.

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