Method of fabricating spaced apart submicron magnetic memory cel

Details Method of fabricating spaced apart submicron magnetic memory cel Method of fabricating spaced apart submicron magnetic memory cel

1996-12-16

1998-09-08

Chaudhari, Chandra

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

438595, H01L 2170

Patent

active

058044582

ABSTRACT:
A method of fabricating a plurality of spaced apart submicron memory cells is disclosed, including the steps of depositing a magnetoresistive system on a substrate formation, depositing and patterning a first layer of material to form sidewalls, and depositing a second, selectively etchable, layer of material on the first layer of material, etching the second layer of material to define spacers on the sidewalls of the first layer of material, etching the magnetoresistive system, using the spacers as a mask, to define a plurality of spaced apart submicron magnetic memory cells, and depositing electrical contacts on the plurality of spaced apart submicron magnetic memory cells.

REFERENCES:
patent: 5389566 (1995-02-01), Lage
patent: 5569617 (1996-10-01), Yeh

Affiliated with

Also associated with

Rating

Method of fabricating spaced apart submicron magnetic memory cel does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating spaced apart submicron magnetic memory cel, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating spaced apart submicron magnetic memory cel will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1281409