Method of fabricating solid-state image sensor

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257249, H01L 213205, H01L 2133, H01L 21339

Patent

active

059769084

ABSTRACT:
A method for fabricating a solid-state image sensor includes the steps of forming a well of a first conductivity type in a substrate of a second conductivity type, forming a plurality of photoelectric conversion regions in the well, forming a plurality of charge coupled devices in the photoelectric conversion regions, forming a gate insulating layer over the substrate, forming a polysilicon layer over the gate insulating layer, forming a cap insulating layer over the polysilicon layer, forming a first optical shielding metal layer over the cap insulating layer, forming a first insulating layer over the first optical shielding metal layer, patterning the polysilicon layer, cap insulating layer, the first optical shielding metal layer, and the first insulating layer to form polygates, forming sidewall spacers on sides of the cap insulating layer and the polygate, forming a second optical shielding metal layer on sides of the first optical shielding metal layer and the sidewall spacers, and removing the first insulating layer.

REFERENCES:
patent: 5264374 (1993-11-01), Watanabe et al.
patent: 5514888 (1996-05-01), Sano et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of fabricating solid-state image sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating solid-state image sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating solid-state image sensor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2134069

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.