Fishing – trapping – and vermin destroying
Patent
1992-02-25
1993-08-31
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 62, 437974, 148DIG135, 148DIG127, H01L 21465
Patent
active
052408833
ABSTRACT:
A thin Silicon film On Insulator (SOI) material fabricating method which is capable of providing a very high thickness uniformity of the silicon film, a process simplification and a considerable reduction of processing cost is disclosed, in which a silicon oxide film is formed on one or both of a p-type silicon bond wafer and a silicon base wafer, then the two wafers are bonded together through the silicon oxide film, subsequently a fixed positive charge is induced in the silicon oxide film to form a n-type inversion layer in the p-type silicon bond wafer adjacent to an interface between the p-type silicon bond wafer and the silicon oxide film layer, and thereafter a chemical etching is effected while applying a positive voltage to the p-type silicon bond wafer so that an etch-stop is made at an interface between a depletion layer including the n-type inversion layer and the p-type layer.
REFERENCES:
patent: 4601779 (1986-07-01), Abernathy et al.
patent: 4649627 (1987-03-01), Abernathy et al.
patent: 4983251 (1991-01-01), Haisma et al.
patent: 5013681 (1991-05-01), Godbey et al.
Abe Takao
Kanai Akio
Katayama Masatake
Nakano Masatake
Ohki Konomu
Dang Trung
Hearn Brian E.
Shin-Etsu Handotai & Co., Ltd.
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