Method of fabricating SOI substrate

Details Method of fabricating SOI substrate Method of fabricating SOI substrate

1995-12-11

1999-03-30

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 84, 117106, C30B 2502

Patent

active

058882979

ABSTRACT:
The invention provides a method of fabricating an SOI substrate including the steps of introducing crystal defects at a desired depth in a silicon substrate, and thereafter, implanting oxygen or nitrogen ions into the silicon substrate, and thermally annealing the silicon substrate. The method of the present invention makes it possible to fabricate an SOI substrate with fewer crystal defects and lower fabrication cost than is possible according to the prior art.

REFERENCES:
patent: 5061642 (1991-10-01), Fujioka
patent: 5183767 (1993-02-01), Baratte et al.
patent: 5244819 (1993-09-01), Yue
"The Anomalous Depth Distribution of Low Dose Oxygen and Nitrogen Ions Implanted into Silicon."; Wong, J.K.Y., et al; Vacuum (1993), 44(3-4), pp. 219-222. (Abstract Only|).
Nakashima et al, "Analysis of Buried Oxide Layer Formation and Mechanism of Threading Dislocation Generation in the Substoichiometric Oxygen Dose Region"; Mar. 1993; pp. 523-534; Journal of Material Research, vol. 8 No. 3.

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