Method of fabricating single-crystalline silicon films

Details Method of fabricating single-crystalline silicon films Method of fabricating single-crystalline silicon films

1981-03-04

1982-08-10

Hoffman, James R.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 431, 427 531, 4272551, B05D 306, H01L 21203, H01L 21263, H01L 21268

Patent

active

043438296

ABSTRACT:
Herein disclosed is a method of fabricating a thick single-crystalline silicon film at a low temperature less than 1000.degree. C. The method is characterized in that, simultaneously as silicon polycrystals are grown on a substrate to form polycrystalline silicon, said polycrystals are irradiated and annealed with a laser or electron beam so that said polycrystalline silicon is single-crystallized to fabricate a single-crystalline silicon film.

REFERENCES:
patent: 3585088 (1971-06-01), Schwuttke et al.
patent: 4059461 (1977-11-01), Fan et al.
patent: 4198246 (1980-04-01), Wu

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