Method of fabricating single crystal films of cubic group II flu

Details Method of fabricating single crystal films of cubic group II flu Method of fabricating single crystal films of cubic group II flu

1987-03-24

1989-09-26

Saba, William G.

Fishing, trapping, and vermin destroying

148 333, 148 334, 148DIG43, 148DIG81, 148DIG169, 156612, 156DIG78, 156DIG103, 357 4, 357 2315, 357 237, 437105, 437243, 437962, H01L 21203, H01L 21314

Patent

active

048700320

ABSTRACT:
Certain semiconductor device structures are described in which single crystal layers of cubic Group II fluorides cover at least part of the surface of III-V semiconductor compound. The Fluoride crystal has a cubic structure and may be lattice matched or lattice mismatched to the compound semiconductor substrate depending on fluoride composition. These fluoride single crystal layers are put down by a molecular beam epitaxy procedure using certain critical substrate temperature ranges and a particular cleaning procedure.

REFERENCES:
patent: 3385731 (1968-05-01), Weimer
patent: 3405331 (1968-10-01), Skalski et al.
patent: 3692572 (1972-09-01), Strehlow
patent: 4453172 (1984-06-01), Farrow et al.
"Insulating Epitaxial Films of BaF.sub.2, CaF.sub.2 and Ba.sub.x Ca.sub.1 -xF.sub.2 Grown by MBE in InP Substrates", Journal of Crystal Growth, 60, P.W. Sullivan et al., 1982, pp. 403-413.
"MBE-Grown Fluoride Films: A New Class of Epitaxial Dielectrics", Journal of Vacuum Science and Technology, 19(3), Farrow et al., 1981, pp. 415-420.
"Epitaxial Growth of Lattice Matched Group II Fluorides on GaAs Substrates", Second European Workshop on Molecular Beam Epitaxy, C. Fontaine et al., 1983, Abstract.
Heterostructure Lasers: Part B-Materials and Operating Characteristics, H. C. Casey, Jr. et al., 1978, Academic Press, New York, Chapter 5.
"Growth of single-Crystalline Epitaxial Group II Fluoride Films on InP(001) by Molecular-Beam Epitaxy", Journal of the Electrochemical Society 130(10), C. W. Tu et al., 1983 pp. 2081-2087.

Affiliated with

Also associated with

Rating

Method of fabricating single crystal films of cubic group II flu does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating single crystal films of cubic group II flu, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating single crystal films of cubic group II flu will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-187544