Method of fabricating silicon substrate for magnetic...

Stock material or miscellaneous articles – Magnetic recording component or stock – Magnetic recording media substrate

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C428S848800, C360S135000, C257S377000, C438S487000

Reexamination Certificate

active

07851076

ABSTRACT:
In this invention, etching is not performed in the step of planarizing a polycrystalline Si wafer, but only mechanical grinding is performed for planarization. This is because, since the etching rate is crystal-face dependent, etching of the polycrystalline Si wafer unavoidably results in formation of steps due to different crystal face orientations of individual crystal grains exposed on a surface of the wafer, thus hindering precision surface planarization. Subsequently, the Si wafer surface is coated with an oxide film to form an Si wafer with oxide film prior to the final polishing stage and then a surface of the oxide film is planarized, to give a planar substrate (i.e., Si substrate with oxide film) having no step on the surface thereof.

REFERENCES:
patent: 3998673 (1976-12-01), Chow
patent: 4222792 (1980-09-01), Lever et al.
patent: 5270241 (1993-12-01), Dennison et al.
patent: 5643472 (1997-07-01), Engelsberg et al.
patent: 5781376 (1998-07-01), Tsukamoto
patent: 6063300 (2000-05-01), Suzuki et al.
patent: 6548875 (2003-04-01), Nishiyama
patent: 6849885 (2005-02-01), Enomoto et al.
patent: 2001/0000586 (2001-05-01), Li et al.
patent: 2001/0041396 (2001-11-01), Yamazaki et al.
patent: 2003/0013280 (2003-01-01), Yamanaka
patent: 2004/0043628 (2004-03-01), Yamazaki et al.
patent: 2005/0196587 (2005-09-01), Shinya et al.
patent: 2005/0239240 (2005-10-01), Ohtani et al.
patent: 2006/0006495 (2006-01-01), Herner et al.
patent: 2008/0233330 (2008-09-01), Ohashi
patent: 2009/0017335 (2009-01-01), Takai
patent: 2009/0220821 (2009-09-01), Ohashi
patent: 5-143972 (1993-06-01), None
patent: 2005-108407 (2005-04-01), None
Aisaka et al (JP 2005-108407) Apr. 2005, machine translation.
Okumura et al (JP 05-143972) Jun. 1993, machine translation.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of fabricating silicon substrate for magnetic... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating silicon substrate for magnetic..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating silicon substrate for magnetic... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4184000

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.