Method of fabricating silicon-on-insulator semiconductor...

Details Method of fabricating silicon-on-insulator semiconductor... Method of fabricating silicon-on-insulator semiconductor...

2006-05-02

2006-05-02

Pham, Hoai (Department: 2822)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C438S459000, C438S527000, C438S528000, C438S480000

Reexamination Certificate

active

07037806

ABSTRACT:
A method of fabricating a semiconductor-on-insulator semiconductor substrate is disclosed that includes providing first and second semiconductor substrates. Either oxygen or nitrogen is introduced into a region adjacent the surface of the first semiconductor substrate and a rare earth is introduced into a region adjacent the surface of the second semiconductor substrate. The surface of the first semiconductor substrate is bonded to the surface of the second semiconductor substrate in a process that includes annealing to react either the oxygen or the nitrogen with the rare earth to form an interfacial insulating layer of either rare earth oxide or rare earth nitride. A portion of either the first semiconductor substrate or the second semiconductor substrate is removed and the surface polished to form a thin crystalline active layer on the insulating layer.

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