Method of fabricating silicon on glass via layer transfer

Details Method of fabricating silicon on glass via layer transfer Method of fabricating silicon on glass via layer transfer

2007-09-04

2007-09-04

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C438S528000, C438S977000

Reexamination Certificate

active

10894685

ABSTRACT:
A method of fabricating a silicon-on-glass layer via layer transfer includes depositing a layer of SiGe on a silicon substrate; relaxing the SiGe layer; depositing a layer of silicon on the relaxed SiGe layer; implanting hydrogen ions in a second hydrogen implantation step to facilitate splitting of the wafer; bonding a glass substrate to the strained silicon layer to form a composite wafer; splitting the composite wafer to provide a split wafer; and processing the split wafer to prepare it for subsequent device fabrication.

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