Method of fabricating silicon nitride nanodots

Static information storage and retrieval – Floating gate

Reexamination Certificate

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C438S257000, C438S775000, C977S726000

Reexamination Certificate

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07092287

ABSTRACT:
A method of forming silicon nitride nanodots that comprises the steps of forming silicon nanodots and then nitriding the silicon nanodots by exposing them to a nitrogen containing gas. Silicon nanodots were formed by low pressure chemical vapor deposition. Nitriding of the silicon nanodots was performed by exposing them to nitrogen radicals formed in a microwave radical generator, using N2as the source gas.

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