Method of fabricating silicon-based carriers

Details Method of fabricating silicon-based carriers Method of fabricating silicon-based carriers

1991-08-20

1993-03-23

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437195, 437203, 437974, H01L 21302

Patent

active

051963779

ABSTRACT:
Silicon is used to create multi-chip carriers for integrated circuits. The process of fabricating the carriers uses standard integrated circuit fabrication equipment. Cavities are etched into a silicon wafer, metallization or polysilicon is deposited to electrically interconnect the cavities, and integrated circuit die are placed in the cavities. Traces connecting the integrated circuits are buried in channels formed in the silicon, which can be doped and biased to provide enhanced isolation between traces as well as control over the electrical characteristics of the traces. The traces can be formed in multiple layers of material placed on the wafer to provide additional communication capacity in the carriers.

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Article entitled "Silicon Hybrid Wafer-Scale Package Technology", by Johnson et al., pp. 845-851, Oct. 1986, IEEE Journal of Solid State Circuits.

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