Method of fabricating shallow trench isolation

Details Method of fabricating shallow trench isolation Method of fabricating shallow trench isolation

1998-04-08

1999-10-05

Fourson, George

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

H01L 21762

Patent

active

059638192

ABSTRACT:
A method of fabricating a shallow trench isolation. On a substrate comprising a pad oxide layer and a mask layer on the pad oxide layer, a trench which penetrates through the mask layer, the pad oxide layer, and a part of the substrate is formed. A part of the mask layer is removed to form an opening on top of the trench, wherein the opening is wider than the trench. An insulation layer is formed on the mask layer to fill the opening and the trench. The insulation layer is etched until the mask layer is exposed. The mask layer is removed, so that a T-shape insulation plug is formed. The insulation plug and the pad oxide layer are etched until the insulation plug and the substrate are at a same level.

REFERENCES:
patent: 5316965 (1994-05-01), Philopossian et al.
patent: 5506168 (1996-04-01), Morita et al.
patent: 5677233 (1997-10-01), Abiko
patent: 5712185 (1998-01-01), Tsai et al.
patent: 5801083 (1998-09-01), Yu et al.
patent: 5834358 (1998-11-01), Pan et al.

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