Method of fabricating semiconductor thin film and method of fabr

Details Method of fabricating semiconductor thin film and method of fabr Method of fabricating semiconductor thin film and method of fabr

1995-01-18

1997-02-25

Kunemund, Robert

Fishing, trapping, and vermin destroying

437129, 437132, 437133, H01L 2120

Patent

active

056058608

ABSTRACT:
A method of fabricating a semiconductor thin film is initiated with preparing a substrate having a surface consisting of a single crystal of Si. The surface has an oxide film. Then, the oxide film is removed. The dangling bonds of the Si atoms on the surface are terminated with hydrogen atoms. An initial layer is formed on the substrate of the single crystal of Si terminated with the hydrogen atoms, of at least one selected from the group consisting of Al, Ga, and In. A buffer layer containing at least In and Sb is formed on the initial layer. A semiconductor thin film containing at least In and Sb is formed on the buffer layer at a temperature higher than the temperature at which the buffer layer is started to be formed. There is also disclosed a method of fabricating a Hall-effect device. This method is initiated with forming a semiconductor thin film by making use of the above-described fabrication method. Then, electrodes are attached to the thin film.

REFERENCES:
patent: 5221637 (1993-06-01), De Boeck
patent: 5252181 (1993-10-01), Dutartre et al.
patent: 5275687 (1994-01-01), Choquette et al.
patent: 5356509 (1994-10-01), Terramoua et al.
Konno et al., "New InSb and GaAs Fabrication Techniques Yield Better, Cheaper Hall Element," Journal of Electronic Engineering, Oct., 1975, vol. 107, pp. 24-28.
Chyi et al., "Molecular Beam Epitaxial Growth and Characterization of InSb on Si," Applied Physics Letters, vol. 54, No. 11, Mar. 13, 1989, pp. 1016-1018.

Affiliated with

Also associated with

Rating

Method of fabricating semiconductor thin film and method of fabr does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating semiconductor thin film and method of fabr, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating semiconductor thin film and method of fabr will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1973877