Method of fabricating semiconductor quantum box

Details Method of fabricating semiconductor quantum box Method of fabricating semiconductor quantum box

1997-09-18

1999-09-14

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Liquid phase epitaxial growth

117 97, 117954, 438694, C30B 1900

Patent

active

059517549

ABSTRACT:
A method of fabricating a semiconductor quantum box uniform in size and free from processing damages comprising the steps of adsorbing elements classified in VI family of the periodic table onto the surface of a single or multi-quantum well structure composed of semiconductors; growing crystallites of a semiconductor or a metal by liquid-drop epitaxy; applying chemical etching to the single or multi-quantum well structure with the use of the crystallites as a mask, thereby removing areas of the single or multi-quantum well structure where the crystallites haven't grown on the surface; removing the crystallites used as mask by chemical etching; and filling a semiconductor into the areas of the single or multi-quantum well structure removed in the afore step.

REFERENCES:
patent: 5132247 (1992-07-01), Chikyou et al.
patent: 5144410 (1992-09-01), Johnson
patent: 5571376 (1996-11-01), Bestwick et al.

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