Method of fabricating semiconductor optical device

Details Method of fabricating semiconductor optical device Method of fabricating semiconductor optical device

2008-02-07

2009-06-30

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S723000, C438S724000, C438S933000, C257SE21170, C257SE21117, C257SE21118, C257SE21134, C257SE21229, C257SE21217, C257SE21267

Reexamination Certificate

active

07553774

ABSTRACT:
In a method of fabricating a semiconductor optical device, insulating structures for an alignment mark for use in electron beam exposure are formed on a primary surface of a first group III-V semiconductor region. After forming the insulating structures, a second group III-V semiconductor region is grown on the first group III-V semiconductor region to form an epitaxial wafer. The height of the insulating structures is larger than thickness of the second group III-V semiconductor region. After forming the second group III-V semiconductor region, alignment for the electron beam exposure is performed. After the alignment, a resist is exposed to an electron beam to form a resist mask. The resist mask has a pattern for a diffraction grating, and the resist is on the epitaxial wafer.

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