Method of fabricating semiconductor optical device

Details Method of fabricating semiconductor optical device Method of fabricating semiconductor optical device

1996-01-29

1998-06-09

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437129, 437 89, 148DIG95, H01L 2120

Patent

active

057632871

ABSTRACT:
A method of making a semiconductor optical device, including an integrated laser diode and optical waveguide lens with a continuous resonator extending along a resonator length direction between a pair of resonator facets, includes forming a pair of dielectric films disposed on a surface of a substrate on which a semiconductor layer of the optical waveguide is to be grown, the dielectric films having a linear symmetry about a hypothetical line extending in the resonator length direction, having edges opposing each other and parallel to the hypothetical line, and widths perpendicular to the resonator length direction that gradually narrow toward one facet from a position in the resonator length direction of the films. A mask pattern that produces a precise layer thickness profile is easily designed.

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Koyama et al, "Novel Structure MOW Electroabsorption Modulator/DFB-Laser Integrated Device Fabricated By Selective Area MOCVD Growth", Electronics Letters, vol. 27, No. 23, 1991, pp. 2138-2140.
Tabuchi et al, "Optical Coupling Characteristics Of The Semiconductor Laser With A Spot Size Converter", Japanese Society of Electronics, Prescript C-182, 1993.
Kobayashi et al, "Narrow Beam Tapered Thickness Waveguide Integrated BH MQW Laser Operation At High Temperatures", Japanese Society of Electronics, 1993, pp. 191-192.

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