Method of fabricating semiconductor lasers

Details Method of fabricating semiconductor lasers Method of fabricating semiconductor lasers

1990-10-30

1992-10-06

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 90, 437107, 437133, 437247, 437173, 437936, 148DIG71, 148DIG94, 148DIG95, H01L 21203, H01L 21225

Patent

active

051531488

ABSTRACT:
The invention is directed to a semiconductor laser wherein the first embodiment is characterized in that the first upper portion cladding layer is assumed to be a double layer construction, the upper layer portion is assumed to be higher in carrier concentration than the lower layer portion, the series resistance component is restrained, so that the sequential direction voltage V.sub.F may be lowered without damaging the other characteristics such as oscillation start current I th and so on.

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patent: 5045500 (1991-09-01), Mitsui et al.
Tanaka et al., ". . . (AlGa)As Double-Heterostructure Lasers Fabricated by Molecular Bean Epitoxy," Jpn. J. Appl. Phys., vol. 24, No. 2 Feb. 1985, pp. L89-90.
Warren et al., "Masked, Anisotropic Thermal Etching and Regrowth for in situ Pattering . . . ," Appl. Phys. Lett., 51(22), Nov. 30, 1987, pp. 1898-1920.

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