Method of fabricating semiconductor laser device using the light

Details Method of fabricating semiconductor laser device using the light Method of fabricating semiconductor laser device using the light

1991-08-13

1992-12-15

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437145, 437170, 437171, 148DIG95, 148DIG160, H01L 2120, H01L 21306, H01R 2122

Patent

active

051717077

ABSTRACT:
A method of fabricating a semiconductor laser device includes disposing a lower cladding layer, a superlattice active layer, an upper cladding layer, and a contact layer in the named order on a substrate, forming resonator end surfaces, disposing, on the resonator end surfaces, films containing a material that disorders the semiconductor superlattice structure when diffused into the superlattice structure, and passing a current between the substrate and the contact layer to cause laser oscillations. The laser oscillations produce laser light that is absorbed at the resonator end surfaces. The resonator end surfaces are locally heated due to absorption of laser light whereby the disorder-causing material is diffused from the films into the resonator end surfaces and the semiconductor superlattice structure in the vicinity of the resonator end surfaces is thereby disordered to form window regions.

REFERENCES:
patent: 4980313 (1990-12-01), Takahashi
Epler et al, "Layer Disordering of GaAs-AlGaAs Superlattices By Diffusion of Laser-Incorporated Si", Journal of Applied Physics, vol. 64, No. 7, Oct. 1988, pp. 3439-3444.
Suzuki et al, "Fabrication Of GaAlAs Window Stripe Multi-Quantum Well Heterostructure Lasers Utilizing Zn Diffusion-Induced Alloying", Electronics Letters, vol. 20, No. 9, Apr. 1984, pp. 383-384.

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