Method of fabricating semiconductor laser

Details Method of fabricating semiconductor laser Method of fabricating semiconductor laser

2006-12-19

2006-12-19

Baumeister, B. William (Department: 2891)

Semiconductor device manufacturing: process

With measuring or testing

Optical characteristic sensed

C438S036000, C257SE21521

Reexamination Certificate

active

07151004

ABSTRACT:
In fabricating a semiconductor laser producing light with a wavelength of 770 to 810 nm, impurities are introduced into an MQW active layer near a light emitting facet of the laser to form a disordered region constituting a window layer. Pump light is applied to the window layer to generate photoluminescence whose wavelength λ dpl (nm) is measured. A blue shift amount λ bl (nm) is defined as the difference between the wavelength λ apl (nm) 0f photoluminescence generated by application of pump light to the active layer on the one hand, and the wavelength λ dpl (nm) of photoluminescence from the window layer under pump light irradiation on the other hand. The blue shift amount λ bl is referenced during the fabrication process in order to predict catastrophic optical damage levels of semiconductor lasers.

REFERENCES:
patent: 4809289 (1989-02-01), Goto et al.
patent: 5469457 (1995-11-01), Nagai et al.
patent: 5494850 (1996-02-01), Cho et al.
patent: 5577063 (1996-11-01), Nagai et al.
patent: 5617957 (1997-04-01), Yoshida et al.
patent: 5703894 (1997-12-01), Valster et al.
patent: 5728623 (1998-03-01), Mori
patent: 5781577 (1998-07-01), Nagai et al.
patent: 5825797 (1998-10-01), Nagai
patent: 6396864 (2002-05-01), O'Brien et al.
patent: 2002/0020341 (2002-02-01), Marchand et al.
Matsumoto et al.; “High Power Laser Diode with Window Grown on Facets”Sharp Gihou, vol. 50, pp. 33-36, (Sep. 1991).
Nagai et al., “Characteristics of Laser Diode with a Partially Intermixed GaAs-AlGaAs Quantum Well”,IEEE J. of Quantum Electronics,Vvol. 31, No. 8, pp. 1364-1370, (Aug. 1995).
Nagai et al., “Characteristics of the Laser Diode with Partially Intermixed GaAs/AlGaAs Quantum Well”,Semiconductor Laser Conf., 1992, Conf. Digest. 13th, IEEE Int'l, pp. 232-233.

Affiliated with

Also associated with

Rating

Method of fabricating semiconductor laser does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating semiconductor laser, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating semiconductor laser will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3720463