Method of fabricating semiconductor laser

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Substrate dicing

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

66460, H01L 2120

Patent

active

057632901

ABSTRACT:
In a method of fabricating semiconductor laser chips using a circular semiconductor wafer, an orientation flat is formed at a part of the peripheral side surface of the semiconductor wafer so that an alignment error of the orientation flat from a crystalline axis of the semiconductor wafer is within.+-.0.04.degree.. Therefore, the processing precision in fabricating semiconductor laser chips using the circular wafer is improved.

REFERENCES:
patent: 4371966 (1983-02-01), Scifres et al.
patent: 4542511 (1985-09-01), Goodfellow et al.
patent: 4755314 (1988-07-01), Sakaguchi et al.
patent: 5060043 (1991-10-01), Yasse
patent: 5187729 (1993-02-01), Ibe et al.
patent: 5227339 (1993-07-01), Kishii
patent: 5279077 (1994-01-01), Miyashita et al.
patent: 5284792 (1994-02-01), Forster et al.
patent: 5402239 (1995-03-01), Ishii et al.
patent: 5677565 (1997-10-01), Funaba
W.J. Bartels "Characterization of Thin Layers on Perfect Crystals with a Multipurpose High Resolution X-Ray Diffractometry." Journal of Vacuum Science Technology B1(2) Apr.-Jun. 1983 pp. 338-345.
Zah et al., "High-Speed 1.3 .mu.m GaInAsP p-Substrate Buried-Crescent Lasers With Semi-Insulating Fe/Ti-Doped InP Current Blocking Layers", Electronics Letters, vol. 24, No. 11, 1988 pp.695-697.
Tanahashi et al., "Liquid Phase Epitaxial Growth Of Fe-Doped Semi-Insulating InP, GaInAsP, amd AlGaInAs", Fujitsu Science Technical Journal, vol. 24, No. 3, 1988, pp. 242-253.
Aoki et al., "High-Speed (10Gbit/s) And Low-Drive-Voltage (1 V Peak To Peak) InGaAs/InGaAsP MOW Electroabsorption-Modulator Integrated DFB Laser With Semi-Insulating Buried Heterostructure", Electronics Letters, vol. 28, No. 12, 1992, pp. 1157-1158.
Aoki et al., "InGaAs/InGaAsP MOW Electroabsorption Modulator Integrated With A DFB Laser Fabricated By Band-Gap Energy Control Selective Area MOCVD", IEEE Journal of Quantum Electronics, vol. 29, No. 6, 1993, pp. 2088-2096.
Oberg et al., "Increased Modulation Bandwidth Up To 20 GHz Of A Detuned-Loaded DBR Laser", IEEE Photonics Technology Letters, vol. 6, No. 2, 1994, pp. 161-163.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of fabricating semiconductor laser does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating semiconductor laser, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating semiconductor laser will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2198322

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.