Method of fabricating semiconductor junction device employing se

Details Method of fabricating semiconductor junction device employing se Method of fabricating semiconductor junction device employing se

1980-01-21

1981-11-24

Weisstuch, Aaron

Metal working

Method of mechanical manufacture

Electrical device making

29572, 136256, 136261, 357 30, 357 65, 427 88, 427 90, H01L 3118

Patent

active

043015921

ABSTRACT:
A method of fabricating a p-n junction device such as solar cells using metal contacts for p regions and n region heat-treated at two different temperatures. A metal with low work functions is heated first to a high temeperature for making ohmic contact to a p-type semiconductor substrate, and then at low temperature for contacting the n-type region. A metal with high work function is heated first to a high temperature for contacting an n-type semiconductor substrate and then at low temperature for contacting the p-type region.

REFERENCES:
patent: 3434885 (1969-03-01), Mandelkorn et al.
patent: 3736180 (1973-05-01), Fischer et al.
H. J. Hovel, "Semiconductors and Semimetals--Vol. 11--Solar Cells", Academic Press (1975), pp. 209-210.

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