Method of fabricating semiconductor integrated circuit...

Details Method of fabricating semiconductor integrated circuit... Method of fabricating semiconductor integrated circuit...

2007-03-27

2007-03-27

Nadav, Ori (Department: 2811)

Electricity: electrical systems and devices

Safety and protection of systems and devices

Load shunting by fault responsive means

C257S355000, C326S083000

Reexamination Certificate

active

11165181

ABSTRACT:
A method of fabricating a semiconductor integrated circuit device is provided. The device includes a protection circuit that connects to a terminal and has a protection diode and a current mirror circuit. The current mirror circuit includes first and second transistors having bases thereof connected together and emitters thereof connected together, so that emitters are connected to an anode of the protection diode. A method includes forming the anode of the protection diode; forming a cathode of the protection diode to surround the anode; forming a collector of the first transistor to surround about a half of the anode within a region surrounded by the cathode; forming a collector of the second transistor to surround about another half of the anode; and forming the bases of the first and second transistors as a common base substantially parallel to an edge of the collectors of the first and second transistors.

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