Method of fabricating semiconductor devices with a passivated su

Details Method of fabricating semiconductor devices with a passivated su Method of fabricating semiconductor devices with a passivated su

1995-11-13

1998-03-31

Tsai, Jey

Semiconductor device manufacturing: process

Forming schottky junction

Compound semiconductor

438182, H01L 2128, H01L 21337

Patent

active

057338272

ABSTRACT:
A method of fabricating semiconductor devices with a passivated surface includes providing first cap and etch stop layers and second cap and etch stop layers with a contact layer thereon so as to define an inter-electrode surface area. A first layer and an insulating layer, which are selectively etchable relative to each other, are deposited on the contact layer and the inter-electrode surface area. The insulating layer and the first layer are individually etched to define an electrode contact area and to expose the inter-electrode surface area. Portions of the first etch stop and cap layers remaining in the contact area are selectively removed and a metal contact is formed in the contact area in abutting engagement with the insulating layer so as to seal the inter-electrode surface area.

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