Method of fabricating semiconductor devices which include vertic

Details Method of fabricating semiconductor devices which include vertic Method of fabricating semiconductor devices which include vertic

1987-07-10

1989-03-21

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 31, 437 61, 437 97, H01L 2120, H01L 21302

Patent

active

048142883

ABSTRACT:
A method of fabricating semiconductor devices which include vertical elements and control elements. A well is formed by etching in a semiconductor substrate of a first conductivity type, and a first epitaxial layer having a second conductivity type opposite to the first conductivity type is epitaxially grown, followed by etching and/or grinding and/or polishing to fill said well. Further, a second epitaxial layer of the first conductivity type is epitaxially grown on the substrate and on the first epitaxial layer, and an impurity-doped layer of the second conductivity type for isolation is formed in the second epitaxial layer to penetrate therethrough. A first element is formed in the second epitaxial layer in a portion that corresponds to the well, and a second element having a vertical structure and having a current capability higher than that of the first element is formed except a portion of the second epitaxial layer that corresponds to the well.

REFERENCES:
patent: 3764409 (1973-10-01), Nomura et al.
patent: 3885999 (1975-05-01), Fusaroli et al.
patent: 3925120 (1975-12-01), Saida et al.
patent: 4089021 (1978-05-01), Sato et al.
patent: 4311532 (1982-01-01), Taylor
patent: 4403395 (1983-09-01), Curran
patent: 4420700 (1983-12-01), Fay et al.
patent: 4497106 (1985-02-01), Momma et al.
patent: 4559694 (1985-12-01), Yoh et al.

Affiliated with

Also associated with

Rating

Method of fabricating semiconductor devices which include vertic does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating semiconductor devices which include vertic, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating semiconductor devices which include vertic will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-476891