Method of fabricating semiconductor devices using laser annealin

Details Method of fabricating semiconductor devices using laser annealin Method of fabricating semiconductor devices using laser annealin

1982-05-10

1983-11-15

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148187, 29571, 29578, 156643, H01L 21268, H01L 2128

Patent

active

044153830

ABSTRACT:
In the manufacture of VLSI (very large scale integrated) MOS (metal-oxide-semiconductor) circuits, a polysilicon gate is deposited on an oxide layer overlaying a silicon substrate. Ideally, the polysilicon gate is made extremely small and with sharply defined vertical boundaries. The invention proposes depositing a polysilicon layer, covering a region of the layer with an antireflective coating, and laser annealing the layer. Laser radiation is absorbed to a higher level by the coated region than elsewhere and consequently the polysilicon layer in this region melts and recrystallizes into large grains. The polysilicon layer is then etched using etch conditions ensuring preferential etching of unrecrystallized polysilicon in comparison with recrystallized polysilicon. Consequently, except at the coated region, the polysilicon is etched quickly and there is very little undercutting of the gate region. Preferential etching methods based on differing dopant levels in polysilicon are known but do not produce the sharp edge definition enabled using the present process.

REFERENCES:
patent: 3943542 (1976-03-01), Ho et al.
patent: 4059461 (1977-11-01), Fan et al.
patent: 4219379 (1980-08-01), Athanas et al.
patent: 4319954 (1982-03-01), White et al.
patent: 4377031 (1983-03-01), Goto et al.
patent: 4377902 (1983-03-01), Shinada et al.

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