Method of fabricating semiconductor devices using an intermediat

Fishing – trapping – and vermin destroying

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437228, H01L 2100, H01L 2102, H01L 21302, H01L 21463

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active

054260736

ABSTRACT:
In wafer processes, after at least one layer which constitutes a structural member of a functional semiconductor element is formed on a semiconductor wafer, a brittle, excessive deposition on an edge of the semiconductor wafer is removed by grinding or etching of the wafer edge until the underlying wafer is exposed. The removal of the excessive deposition on the wafer edge reduces dust generation caused from crack and peel-off of the excessive deposition on the wafer edge, even if the wafer edge contacts a jig, and the like. Thus, the reduction in dust generation improves production yields of highly integrated semiconductor devices.

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European Search Rpt., conducted at The Hague on Apr. 4, 1990 by Examiner J. F. M. Gelebart.

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