Method of fabricating semiconductor devices using an intermediat

Details Method of fabricating semiconductor devices using an intermediat Method of fabricating semiconductor devices using an intermediat

1993-10-13

1995-06-20

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437228, H01L 2100, H01L 2102, H01L 21302, H01L 21463

Patent

active

054260736

ABSTRACT:
In wafer processes, after at least one layer which constitutes a structural member of a functional semiconductor element is formed on a semiconductor wafer, a brittle, excessive deposition on an edge of the semiconductor wafer is removed by grinding or etching of the wafer edge until the underlying wafer is exposed. The removal of the excessive deposition on the wafer edge reduces dust generation caused from crack and peel-off of the excessive deposition on the wafer edge, even if the wafer edge contacts a jig, and the like. Thus, the reduction in dust generation improves production yields of highly integrated semiconductor devices.

REFERENCES:
patent: 4144099 (1979-04-01), Edmonds et al.
patent: 4510176 (1985-04-01), Cuthbert et al.
patent: 4567646 (1986-02-01), Ishikawa et al.
patent: 4631804 (1986-12-01), Roy
patent: 4638553 (1987-01-01), Nilarp
patent: 4662956 (1987-05-01), Roth et al.
Patent Abstracts of Japan, vol. 9, No. 49 (E-300) [1772], 2nd Mar. 1985; & JP-A-59 188 921 (Nippon Denki K.K.) 26 Oct., 1984.
Patent Abstracts of Japan, vol. 7, No. 204 (E-197) [1349], 9th Sep. 1983; & JP-A-58 100 432 (Hitachi Seisakusho K.K.) Jun. 15, 1983.
European Search Rpt., conducted at The Hague on Apr. 4, 1990 by Examiner J. F. M. Gelebart.

Affiliated with

Also associated with

Rating

Method of fabricating semiconductor devices using an intermediat does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating semiconductor devices using an intermediat, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating semiconductor devices using an intermediat will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1844031