Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2011-01-18
2011-01-18
Sefer, A. (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S094000, C257S184000, C257S461000
Reexamination Certificate
active
07872252
ABSTRACT:
Electronic and opto-electronic devices having epitaxially-deposited III/V compounds on vicinal group IV substrates and method for making same. The devices include an AlAs nucleating layer on a Ge substrate. The group IV substrate contains a p-n junction whose change of characteristics during epitaxial growth of As-containing layers is minimized by the AlAs nucleating layer. The AlAs nucleating layer provides improved morphology of the devices and a means to control the position of a p-n junction near the surface of the group IV substrate through diffusion of As and/or P and near the bottom of the III/V structure through minimized diffusion of the group IV element.
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Fafard Simon
Puetz Norbert
Riel Bruno J.
Allard Louis B.
Borden Ladner Gervais LLP
Cyrium Technologies Incorporated
Sefer A.
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