Method of fabricating semiconductor devices in dielectrically is

Details Method of fabricating semiconductor devices in dielectrically is Method of fabricating semiconductor devices in dielectrically is

1985-11-21

1987-09-15

Roy, Upendra

Fishing, trapping, and vermin destroying

156643, 156648, 357 55, H01L 21306, C03C 2506

Patent

active

046929967

ABSTRACT:
A semiconductor device comprising a semiconductor silicon substrate, a silicon oxide layer formed on the substrate, and at least one semiconductor device region formed within the silicon oxide layer, wherein the semiconductor device region is generally V-shaped in cross section with its reduced end directed toward the silicon substrate and its slanting opposite side surfaces isolated from the silicon substrate with the bulk of the silicon oxide layer.

REFERENCES:
patent: 4373252 (1983-02-01), Caldwell
patent: 4502913 (1985-03-01), Lechaton et al.
patent: 4561932 (1985-12-01), Gris et al.
patent: 4580331 (1986-04-01), Soclof

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