Method of fabricating semiconductor devices having a mesa struct

Details Method of fabricating semiconductor devices having a mesa struct Method of fabricating semiconductor devices having a mesa struct

1996-08-30

1999-09-07

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Mesa formation

438 40, 438713, 438733, H01L 2100

Patent

active

059500689

ABSTRACT:
A semiconductor device comprises a monocrystalline silicon wafer having a major surface lying in the {100} crystal plane. Disposed on the surface is a mesa having a generally square cross-section with generally rounded corners. The mesa has four main side walls each having a slope of around 45 degrees with respect to the base plane of the mesa, and the horizontal edges of the main side walls are disposed at an angle of at least around 12 degrees to the {111} directions on the wafer surface. The corners of the mesa each comprises a number of surfaces also having slopes of around 45 degrees and one surface having a slope of around 54 degrees. A high-low (N.sup.+ N.sup.- or P.sup.+ P.sup.-) junction is disposed within the mesa and makes a continuous line intercept with the mesa side walls around the entire periphery of the mesa. Except for exceptionally small deviations of no great significance, the high-low junction intercept is at a constant height location entirely around the mesa periphery. The mesa is formed by anisotropic etching using a mask having main sides disposed at an angle of at least around 12 degrees to the {111} directions and rounded corners.

REFERENCES:
patent: 5399901 (1995-03-01), Einthoven

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