Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal
Reexamination Certificate
2006-09-05
2006-09-05
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
C438S052000, C216S002000
Reexamination Certificate
active
07101724
ABSTRACT:
The present invention relates to MEM switches. More specifically, the present invention relates to a system and method for making MEM switches having a common ground plane. One method for making MEM switches includes: patterning a common ground plane layer on a substrate; forming a dielectric layer on the common ground plane layer; depositing a DC electrode region through the dielectric layer to contact the common ground plane layer; and depositing a conducting layer on the DC electrode region so that regions of the conducting layer contact the DC electrode region, so that the common ground plane layer provides a common ground for the regions of the conducting layer.
REFERENCES:
patent: 5121089 (1992-06-01), Larson
patent: 5258591 (1993-11-01), Buck
patent: 5578976 (1996-11-01), Yao
patent: 5629565 (1997-05-01), Schlaak et al.
patent: 5638946 (1997-06-01), Zavracky
patent: 6046659 (2000-04-01), Loo et al.
patent: 6331257 (2001-12-01), Loo et al.
patent: 6384353 (2002-05-01), Huang et al.
patent: 6426237 (2002-07-01), Jech et al.
patent: 6667245 (2003-12-01), Chow et al.
patent: 6803559 (2004-10-01), Hsu et al.
patent: 6842097 (2005-01-01), Hsu et al.
patent: 6872319 (2005-03-01), Tsai
patent: 6903637 (2005-06-01), Miyazaki et al.
patent: 2004/0091197 (2004-05-01), Tonomura et al.
patent: 2005/0002079 (2005-01-01), Novotny et al.
Petersen, K.E. 1978, “Dynamic micromechanics on silison: techniques and devices.”
Petersen, K.E, “Forming the Contact Surface of Micromechanical Switches”, IBM J. Res. Develop., vol. 23, No. 4, Jul. 1979, pp. 376-385.
Daniel Hyman, Juan Lam, Brett Warneke, Adele Schmitz, T. Y. Hsu, Julia Brown, James Schaffner, Andy Walston, Robert Y. Loo, Mehran Mehregany, and Jae Lee, “Surface-micromachined RF MEMS switches on GaAs substrates,” International Journal of MicroElectroMechanical Systems (JMEMS), vol. 13, No. 6, Dec. 2004, pp. 902-911.
Y. Wang, Z. Li, D. T. McCormick, and N. C. Tien, “A Low-voltage Lateral MEMS Switch with High RF Performance,” Journal of MicroElectroMechanical Systems (JMEMS), vol. 13, No. 6, Dec. 2004, pp. 902-911.
Yao, J.J., “RF MEMS from a device perspective”, Journal Micromechanics and Microengineering 10: R9-R38, 2000.
Zavracky, P.M., Majumdar, S., McGruer,N, 1997, Micromechanical switches fabricated using nickel surface micromachining, Journal of Microelectromechannical Systems 6(1): 3-9.
Mulpuri Savitri
Wireless MEMs, Inc.
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