Method of fabricating semiconductor devices and the devices

Details Method of fabricating semiconductor devices and the devices Method of fabricating semiconductor devices and the devices

1996-03-29

1999-04-20

Bowers, Charles

Semiconductor device manufacturing: process

Forming schottky junction

Combined with formation of ohmic contact to semiconductor...

438400, 438406, 438507, H01L 2128

Patent

active

058952608

ABSTRACT:
Fabricating a device including a Schottky diode by growing a dielectric film on a SiC substrate structure and forming an ohmic contact on the opposite surface of the substrate structure by depositing a layer of metal and annealing at a temperature above 900.degree. C. Implanting doping material in the substrate structure through spaced apart openings to form high resistivity areas and depositing a dielectric layer on the dielectric film to define a contact opening positioned between the spaced apart high resistivity areas. Annealing the implant at a temperature less than approximately 400.degree. C. to reduce reverse leakage current and depositing metal in the contact opening to form a Schottky contact.

REFERENCES:
patent: 5378642 (1995-01-01), Brown et al.
patent: 5612232 (1997-03-01), Thero et al.

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