Method of fabricating semiconductor devices

Details Method of fabricating semiconductor devices Method of fabricating semiconductor devices

1979-04-20

1980-07-22

Massie, Jerome W.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148188, 156637, 156653, 156656, 156657, 1566591, 427 88, 427 93, 430319, H01L 21225, H01L 21308

Patent

active

042138078

ABSTRACT:
A method of fabricating a semiconductor device comprising the steps of disposing a layer of dopant material over exposed portions of a surface of a semiconductor body and over portions of a masking layer adjacent the exposed portions, the dopant material having a diffusion coefficient through the masking layer at least about as large as its diffusion coefficient into the body. The dopant material is selectively etched to remove portions overlying the masking layer and thereafter remaining portions of the masking layer are etched to remove any dopant material which might still remain thereover.

REFERENCES:
patent: 3415679 (1968-12-01), Chuss
patent: 3437533 (1969-04-01), Dingwall
patent: 3535771 (1970-10-01), Meer et al.
patent: 3661660 (1972-05-01), Wessells
patent: 3887993 (1975-06-01), Okada et al.
patent: 4076860 (1978-02-01), Kuroda

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