Method of fabricating semiconductor devices

Fishing – trapping – and vermin destroying

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437944, 437228, 437229, 437203, 148DIG100, H01L 2100, H01L 2102, H01L 2120, H01L 21203

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048248002

ABSTRACT:
An improved method of lift-off processing semiconductor devices including ohmic electrodes, gate electrodes, metal wiring, and the like. The invention provides for the production of an access groove pattern in the surface of the substrate prior to the application of the resist by photolithography and the deposition of metallization. The access groove pattern increases the opportunity for the chemical stripper to dissolve the resist and lift away the unrequired portions of the metallization, thus improving the reliability of the lift-off.

REFERENCES:
patent: 4040168 (1977-08-01), Huang
patent: 4497684 (1985-02-01), Sebesta

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