Method of fabricating semiconductor devices

Details Method of fabricating semiconductor devices Method of fabricating semiconductor devices

1994-06-22

1996-05-28

Fourson, George

Fishing, trapping, and vermin destroying

148DIG25, 148DIG118, 437238, H01L 2102

Patent

active

055211267

ABSTRACT:
A method of fabricating a semiconductor device includes the steps of forming a wiring layer on the surface of a semiconductor substrate, depositing a silicone film on the whole surface of the semiconductor substrate including the wiring layer by a CVD method and exposing the silicone film to oxidative plasma with enhanced frequencies including components of 1 MHz or less to change to a silicon oxide film, the depositing step and exposing step being alternately repeated in the same apparatus till the silicon oxide film having any desired thickness is obtained. The resulting silicon oxide film has the smooth surface and the high density.

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patent: 4168330 (1979-09-01), Kaganowicz
patent: 5262358 (1993-11-01), Sigmund et al.
patent: 5290736 (1994-03-01), Sato et al.
M. Nakano et al. Extended Abst. 21st Conf Solid State Dev. and Materials Tokyo 1989 pp. 49-52.
S. Noguchi, et al., Liquid Phase Oxidation Employing O Atoms Produced by Microwave Discharge and Si(CH.sub.3)4, Extended Abstracts of the 19th Conference on Solid State Devices and Materials, Tokyo, 1987, pp. 451-454.
Extended Abstracts (The 38th Spring Meeting, 1991); The Japan Society of Applied Physics and Related Societies, p. 633.
M. Hatanaka, et al., H.sub.2 O-Teos Plasma-CVD Realizing Dielectrics Having A Smooth Surface, Jun. 11-12, 1991 VMIC Conference, pp. 435-441.
M. Nakano, et al., Digital CVD of SiO.sub.2, Extended Abstracts of the 21st Conference on Solid State Devices and Materials, Tokyo, 1989, pp. 49-52.

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