Method of fabricating semiconductor device with STI structure

Details Method of fabricating semiconductor device with STI structure Method of fabricating semiconductor device with STI structure

2007-07-27

2009-08-11

Doan, Theresa T (Department: 2814)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S426000, C438S427000, C257S510000

Reexamination Certificate

active

07572713

ABSTRACT:
A semiconductor device such as a flash memory includes a semiconductor substrate having a surface, and a plurality of trenches formed in the substrate so as to be open at the surface of the substrate, the trenches having opening widths different from each other. The trench with a smaller opening width is formed so as to have a first depth and the trench with a larger opening width has a bottom including opposite ends each of which has a second depth deeper than the first depth and a central portion shallower than the second depth.

REFERENCES:
patent: 5683932 (1997-11-01), Bashir et al.
patent: 6440819 (2002-08-01), Luning
patent: 6531402 (2003-03-01), Nakagawa
patent: 7265022 (2007-09-01), Ito et al.
patent: 2000-156402 (2000-06-01), None

Affiliated with

Also associated with

Rating

Method of fabricating semiconductor device with STI structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating semiconductor device with STI structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating semiconductor device with STI structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4090308