Method of fabricating semiconductor device with STI structure

Details Method of fabricating semiconductor device with STI structure Method of fabricating semiconductor device with STI structure

2007-09-04

2007-09-04

Doan, Theresa (Department: 2814)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S426000, C438S443000

Reexamination Certificate

active

11086379

ABSTRACT:
A method of fabricating a semiconductor device, includes depositing, on a semiconductor substrate, a gate insulating film, a polycrystalline or amorphous silicon film, a silicon nitride film and a silicon oxide film sequentially, patterning a resist for forming a plurality of trenches on an upper surface of the substrate so as to have opening widths differing from each other, etching the silicon oxide film and the silicon nitride film formed on the substrate by an reactive ion etching (RIE) process with the resist serving as a mask, and etching the polycrystalline or amorphous silicon film, the gate insulating film and the substrate by the RIE process with the etched silicon oxide film and silicon nitride film serving as a mask using reactive plasma including a halogen gas, fluorocarbon gas, Ar and O2, thereby simultaneously forming the trenches with opening widths differing from each other.

REFERENCES:
patent: 6531402 (2003-03-01), Nakagawa
patent: 2000-156402 (2000-06-01), None

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