Method of fabricating semiconductor device with channel ion impl

Details Method of fabricating semiconductor device with channel ion impl Method of fabricating semiconductor device with channel ion impl

1995-06-13

1997-03-04

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437 43, 437 45, 437 52, 437 56, H01L 218238, H01L 218247

Patent

active

056078684

ABSTRACT:
In a method of fabricating a semiconductor device in which at least one of a first conductive layer (polysilicon film) and a second conductive layer (polysilicon film) on a semiconductor substrate is used as a gate electrode of a MOS transistor to be formed on the semiconductor substrate, channel ion implantation for controlling the threshold voltages of the MOS transistors is performed by using the first conductive layer (polysilicon film) as a buffer film. Since the first conductive layer used as the gate electrode is also used as the buffer film, a dummy gate oxide film need not be provided, which is used as a buffer film for the channel ion implantation. Removal of the dummy gate oxide film is also unnecessary. Thus, it is possible to reduce the number of times of a dilute HF treatment which is performed to remove a dummy gate oxide film. The result is that a decrease in thickness of the field oxide film is reduced.

REFERENCES:
patent: 4651406 (1987-03-01), Shimizu et al.
patent: 4737471 (1988-04-01), Shirato et al.
patent: 4845047 (1989-07-01), Holloway et al.
patent: 5028552 (1991-07-01), Ushiku
patent: 5248627 (1993-09-01), Williams
patent: 5407839 (1995-04-01), Maruo

Affiliated with

Also associated with

Rating

Method of fabricating semiconductor device with channel ion impl does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating semiconductor device with channel ion impl, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating semiconductor device with channel ion impl will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2145627