Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2005-09-06
2005-09-06
Chambliss, Alonzo (Department: 2814)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S253000, C438S396000, C438S680000, C438S723000, C257S306000
Reexamination Certificate
active
06939725
ABSTRACT:
A capacitor including a capacitor lower electrode, a capacitor dielectric film of a highly dielectric film or a ferroelectric film and a capacitor upper electrode is formed on a semiconductor substrate. A protection film is formed on the semiconductor substrate so as to cover the capacitor. A first TEOS film having a relatively large water content is formed on the protection film through first TEOS-O3CVD where an ozone concentration is relatively low. A second TEOS-O3film having a relatively small water content is formed on the first TEOS-O3film through second TEOS-O3CVD where the ozone concentration is relatively high.
REFERENCES:
patent: 5766992 (1998-06-01), Chou et al.
patent: 5960252 (1999-09-01), Matsuki et al.
patent: 6051858 (2000-04-01), Uchida et al.
patent: 6174822 (2001-01-01), Nagano et al.
patent: 6201271 (2001-03-01), Okutoh et al.
patent: 6225185 (2001-05-01), Yamazaki et al.
patent: 6274424 (2001-08-01), White, Jr. et al.
patent: 6274479 (2001-08-01), Srinivasan
patent: 6376327 (2002-04-01), Sandhu et al.
patent: 6737697 (2004-05-01), Kutsunai et al.
patent: 05-259155 (1993-10-01), None
patent: 06-326087 (1994-11-01), None
patent: 07-050391 (1995-02-01), None
patent: 08-274174 (1996-10-01), None
patent: 074090 (1997-03-01), None
patent: 10-144681 (1998-05-01), None
patent: 10-270556 (1998-10-01), None
patent: 11-008360 (1999-01-01), None
patent: 11-054713 (1999-02-01), None
patent: 11-074486 (1999-03-01), None
patent: 11-126876 (1999-05-01), None
patent: 11-126883 (1999-05-01), None
patent: 2000-049227 (2000-02-01), None
Kawasaki Steel Corp., Semiconductor Device Manufacture Method Involving Formation Insulating Fillm Over Upper Surface of Heat Oxide Film by normal Pressure CVD using Material Gas in which Ratio of Tetra:ethyl-ortho-silicate and Ozone Gas Varies, Derwent.
Hayashi Shinichiro
Judai Yuji
Kutsunai Toshie
Nagano Yoshihisa
Chambliss Alonzo
Matsushita Electric - Industrial Co., Ltd.
Studebaker Donald R.
LandOfFree
Method of fabricating semiconductor device with capacitor... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabricating semiconductor device with capacitor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating semiconductor device with capacitor... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3387620