Method of fabricating semiconductor device using an Sb protectio

Details Method of fabricating semiconductor device using an Sb protectio Method of fabricating semiconductor device using an Sb protectio

1990-05-02

1991-05-21

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG5, 148DIG26, 148DIG11, 357 34, 357 55, 437 31, 437 40, 437126, 437945, H01L 2120

Patent

active

050175173

ABSTRACT:
A method for fabricating a semiconductor device comprises the steps of forming the first semiconductor layer on a semiconductor substrate, forming a surface protection layer of antimony (Sb) or the material having Sb as its main component, executing the other steps necessary for the fabrication of the semiconductor device, removing the surface protection layer, and forming, on the first semiconductor layer thus exposed, the second semiconductor layer.

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Evans et al., "Protective Overlayer Techniques for Preparation of InSb(001) Surfaces", Surf. Sci., vol. 226, No. 1-2, Feb. 1990, pp. 169-179.

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