Method of fabricating semiconductor device having refractory met

Details Method of fabricating semiconductor device having refractory met Method of fabricating semiconductor device having refractory met

1995-05-31

1997-01-14

Niebling, John

Fishing, trapping, and vermin destroying

437 24, 437 41, H01L 2128

Patent

active

055939236

ABSTRACT:
A method of producing a semiconductor device having a refractory metal silicide film includes the steps of implanting ions such as silicon into an active region such as drain/source region to form a damage portion therein, depositing a refractory metal on the damage portion, and annealing to form the refractory metal silicide layer. This silicide layer is formed by the refractory metal being reacted with silicon in the damage portion of the active region.

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S. Wolf, "Silicon Processing For the VLSI Era, vol. 1", Lattice Press, 1986, pp. 290, 295-301.
"Handotai Kenkyu 24", ed. by J. Nishizawa and H. Shinkokai, Kogyo Chosakai (1986), pp. 207-239.

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