Method of fabricating semiconductor device having opening...

Details Method of fabricating semiconductor device having opening... Method of fabricating semiconductor device having opening...

2005-06-21

2005-06-21

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

C438S692000, C438S700000, C438S702000

Reexamination Certificate

active

06908858

ABSTRACT:
A method of fabricating a semiconductor device capable of relaxing pattern dependency in a planarization step is obtained. This method of fabricating a semiconductor device comprises steps of filling up an opening with a filler while forming the filler on the opening and on a non-opening part, forming a mask layer at least on a part of the filler located on the opening, etching a region, formed with no mask layer, of a part of the filler located on the non-opening part by a prescribed thickness through a mask of the mask layer, and thereafter scraping the upper surface of the filler located on the opening and on the non-opening part thereby performing surface planarization. Thus, the width of the upper surface of the part of the filler located on the non-opening part having a large height is reduced. Therefore, the part having a large height is so readily removed that the planarized surface can be prevented from dispersion.

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