Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1985-12-13
1987-05-05
Roy, Upendra
Metal working
Method of mechanical manufacture
Assembling or joining
29576B, 29590, 148 15, 148175, 148187, 148DIG140, 357 61, 357 65, 357 91, H01L 21283, H01L 754
Patent
active
046620605
ABSTRACT:
A method of forming a semiconductor device having a non-alloyed contact layer. An active region is formed in a substrate and the non-alloyed contact layer is formed in the active region, the barrier height of source and drain electrodes for the non-alloyed contact layer being lower than the barrier height of the source and drain electrodes for the active region or the substrate. The preferred method of forming the non-alloyed contact layer is high dose implantation of an element selected in accordance with the substrate material. For example, if the substrate is GaAs the non-alloyed contact layer is formed by implanting In, and if the substrate is InP the non-alloyed contact layer is formed by implanting As or Sb.
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Aina Olaleye A.
Lakhani Amir A.
Allied Corporation
Lamb Bruce L.
Roy Upendra
Trepp Robert M.
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